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IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
(PCB Mounted, Steady-State) a
Maximum Junction-to-Case (Drain)
SYMBOL
R thJA
R thJC
TYP.
-
-
MAX.
40
2.5
UNIT
°C/W
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
V DS
? V DS /T J
V GS(th)
I GSS
I DSS
V GS = 0, I D = 250 μA
Reference to 25 °C, I D = 1 mA c
V DS = V GS , I D = 250 μA
V GS = ± 20 V
V DS = 60 V, V GS = 0 V
V DS = 48 V, V GS = 0 V, T J = 150 °C
60
-
2.0
-
-
-
-
0.061
-
-
-
-
-
-
4.0
± 100
25
250
V
V/°C
V
nA
μA
Drain-Source On-State Resistance
R DS(on)
V GS = 10 V
I D = 10 A b
-
-
0.10
?
Forward Transconductance
g fs
V DS = 25 V, I D = 10
A d
5.5
-
-
S
Dynamic
Input Capacitance
C iss
V GS = 0 V,
-
640
-
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C oss
C rss
Q g
V DS = 25 V,
f = 1.0 MHz, see fig. 5 d
-
-
-
360
79
-
-
-
25
pF
Gate-Source Charge
Q gs
V GS = 10 V
I D = 17 A, V DS = 48 V,
see fig. 6 and 13 b, c
-
-
5.8
nC
Gate-Drain Charge
Turn-On Delay Time
Q gd
t d(on)
-
-
-
13
11
-
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
t r
t d(off)
t f
L S
V DD = 30 V, I D = 17 A,
R g = 18 ? , R D = 1.7 ? , see fig. 10 b, c
Between lead, and center of die contact
-
-
-
-
58
25
42
7.5
-
-
-
-
ns
nH
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current a
I S
I SM
MOSFET symbol
showing the
integral reverse
p - n junction diode
G
D
S
-
-
-
-
17
68
A
Body Diode Voltage
V SD
T J = 25 °C, I S = 17 A, V GS = 0
V b
-
-
1.5
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
t rr
Q rr
T J = 25 °C, I F = 17 A, dI/dt = 100 A/μs b, c
-
-
88
290
180
640
ns
μC
Forward Turn-On Time
t on
Intrinsic turn-on time is negligible (turn-on is dominated by L S and L D )
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ? 300 μs; duty cycle ? 2 %.
c. Uses IRFZ24/SiHFZ24 data and test conditions.
www.vishay.com
2
Document Number: 90366
S11-1063-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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